Session Details
[NNS-003]Novel Nitride Semiconductors and their Functional Revolution 3
Sat. Dec 13, 2025 11:45 AM - 12:00 PM JST
Sat. Dec 13, 2025 2:45 AM - 3:00 AM UTC
Sat. Dec 13, 2025 2:45 AM - 3:00 AM UTC
ES Hall(ES Building)
[NNS-3-01]Transport in N-polar AlN-based HEMTs with thin GaN channels on sapphire
*Markus Pristovsek1, Yoann Robin1, Xu Yang1, Itsuki Furuhashi1, Chengzhi Zhang2, Matthew D Smith2, Martin Kuball2, Sheng Zhang3, Xinhua Wang3 (1. CIRFE, Nagoya University, 2. University of Bristol, UK, 3. Inst. Microelectronics, CAS, China)
