International Conference on Materials and Systems for Sustainability 2025（ICMaSS2025）
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PosterNovel nitride semiconductors and their functional revolution / ASPIRE

[NNS/AS-P-001]Novel Nitride Semiconductors and their Functional Revolution P1 / ASPIRE P1

Sat. Dec 13, 2025 2:00 PM - 4:45 PM JST
Sat. Dec 13, 2025 5:00 AM - 7:45 AM UTC
Entrance Hall （ES Building）

[NNS-P-1-01]Defect Characterization in Carbon Auto-Doped GaN by Optical and Electrical Methods

*Anna Honda1, Hirotaka Watanabe1, Momoko Inayoshi3, Takeshi Kato1,2, Wakana Takeuchi3, Yoshio Honda1,2 (1. Institute of Materials and Systems for Sustainability, Nagoya University, 2. Department of Electronics, Nagoya University, 3. Department of Electrical and Electronic Engineering, Aichi Institute of Technology)

[NNS-P-1-02]Coordination geometry of praseodymium ions implanted in gallium nitride and its sensing applications

*Shinichiro Sato1, Eri Yokozuka1, Shiro Entani1, Naotsugu Nagasawa1, Hiroyuki Saitoh1, Takuya Tsuji2, Daiju Matsumura2, Shin Ito3, Manato Deki3, Yoshio Honda3, Hiroshi Amano3, Shugo Nitta4, Michał Boćkowski5 (1. National Institutes for Quantum Science and Technology, 2. Japan Atomic Energy Agency, 3. Nagoya University, 4. Mie University, 5. Polish Academy of Sciences)

[NNS-P-1-03]Automated Pathway Exploration of Gas-Phase Reaction in AlN Metalorganic Vapor Phase Epitaxy: Initial Decomposition Process of Trimethylaluminum

*Naho Sato1, Kanami Sugiyama2, Akira Kusaba1,3 (1. Kyushu Univ., 2. Kyoto Univ., 3. Nagoya Univ.)

[NNS-P-1-04]Progress of N-polar GaN/AlN HEMT through N-polar AlN surface treatment and optimization of GaN channel

*Narihito D. Okada1 (1. Yamaguchi Univ.)

[NNS-P-1-05]Addressing Oxidation and Diffusion Challenges in shallow p-GaN Contacts via Mg/SiNx Bilayer Annealing

*Haitao Wang1, Jia Wang1,2, Amano Hiroshi1,2 (1. Institute of Materials and Systems for Sustainability, 2. Institute for Advanced Research)

[NNS-P-1-06]Study of Beryllium Acceptor States in Aluminum Nitride by Cathodoluminescence Analysis

*Yingying Lin1, Jia Wang2, Haitao Wang3, Maki Kushimoto4, Yoshio Honda3, Hiroshi Amano3 (1. Deep Tech Serial Innovation Center, Nagoya University, Furo-Cho, Chikusa-ku, 464-8603 Nagoya, Japan, 2. Institute for Advanced Research, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya, 464-8601, Japan, 3. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-Cho, Chikusa-ku, 464-8601 Nagoya, Japan, 4. Graduate School of Engineering, Nagoya University, Furo-Cho, Chikusa-ku, 464-8601 Nagoya, Japan)

[NNS-P-1-07]Evaluation of Insulator/GaN Interface Properties in MOSFETs with Floating Gate Structure

*Xigen Li1, Manato Deki2, Hirotaka Watanabe3, Shun Lu3, Jia Wang4, Shugo Nitta5, Yoshio Honda1,2,3,4, Hiroshi Amano1,2,3,4 (1. Department of Electronics, Nagoya University, 2. Deep Tech Serial Innovation Center, Nagoya University, 3. Institute of Materials and System for Sustainability, Nagoya University, 4. Institute for Advanced Research, Nagoya University, 5. Innovation center for semiconductor and digital future, Mie University)

[NNS-P-1-08]Evaluation of a surface conductive layer on etched u-GaN by C-V characteristics for charge balance evaluation of polarization superjunction GaN FETs

*Eito Kokubo1, Hirotaka Watanabe2, Atsushi Tanaka2, Manato Deki3, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1. Department of Electronics, Nagoya University, 2. Institute of Materials and Systems for Sustainability, Nagoya University, 3. Deep Tech Serial Innovation Center, Nagoya University, 4. Institute for Advanced Research, Nagoya University)

[NNS-P-1-09]Room temperature electroluminescence of Pr-implanted GaN p-n junction diode

*Shin Ito1, Shin-ichiro Sato2, Michal Bockowski3, Manato Deki4, Hirotaka Watanabe5, Shugo Nitta7, Maki Kushimoto1, Atsushi Tanaka5, Ken-ichi Yoshida8, Hideki Minagawa8, Yoshio Honda4,5,6, Hiroshi Amano4,5,6 (1. Graduate School of Engineering, Nagoya University, 2. National Institutes for Quantum Science and Technology, 3. Institute of High Pressure Physics, Polish Academy of Sciences, 4. Deep Tech Serial Innovation Center, Nagoya University, 5. Institute of Materials and Systems for Sustainability, 6. Institute for Advanced Research, Nagoya University, 7. Innovation Center for Semiconductor and Digital Future, Mie University, 8. Ion Technology Center Co.,Ltd.)

[AS-P-001-1]Modeling and Simulation of the C-V Characteristic of AlGaN-based UVC LEDs

*Matteo Buffolo1,2、N. Roccato1、F. Piva1、C. De Santi1、N. Trivellin1,3、M. Schilling4、A. Muhin4、J. Höpfner4、M. Guttmann5、T. Wernicke4 (1. Department of Information Engineering, University of Padova, Italy、2. Department of Physics and Astronomy, University of Padova, Italy、3. Department of Industrial Engineering, University of Padova, Italy、4. Technische Universität Berlin, Institute of Solid State Physics, Germany、5. Ferdinand-Braun-Institut, Leibnizinstitut für Höchstfrequenztechnik, Berlin, Germany)

[AS-P-001-2]Analysis of OFF-state Threshold Voltage Instability on Vertical GaN-on-Si Trench MOSFETs

*Manuel Fregolent1,2、F. Bergamin1,2、D. Favero1,2、C. De Santi1,2、Andrea Cester1,2、C. Huber3、G. Meneghesso1,2、E. Zanon1,2、M. Meneghini1,2,4 (1. Department of Information Engineering, University of Padova, Padova, Italy 、2. UNET - National Interuniversity Consortium for Nanoelectronics, Italy 、3. Department for Advanced Technologies and Micro Systems, Robert Bosch GmbH, Renningen, Germany 、4. Department of Physics and Astronomy, University of Padova, Padova, Italy)

[AS-P-001-3]Modeling the Changes in the Electrical Properties of Vertical GaN-on-GaN pin Diodes Under Electrical Stress

*Simone Leonardo Longato1、Ambra Maria Vianello1、Manuel Fregolent1、Dawei Wang3、Houqiang Fu3、Shisong Luo4、Yuji Zhao4、Matteo Buffolo1,2、Isabella Rossetto1、Carlo De Santi1、Gaudenzio Meneghesso1、 Enrico Zanoni1、Matteo Meneghini1,2 (1. Department of Information Engineering, Padova University, 、2. Department of Physics and Astronomy, University of Padova 、3. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85281, USA 、4. Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA)

[AS-P-001-4]Degradation Effects in UVC LEDs Analyzed by Single-Wavelength Photo-Capacitance Transients

*Marco Pilati1、F. Piva1、M. Buffolo1,2、C. De Santi1、M. Meneghini1,2 (1. Department of Information Engineering, University of Padova, Italy 、2. Department of Physics, University of Padova, Italy)

[AS-P-001-5]N-polar AlN-based transistors with enhancement-mode achieved using p-NiOx gate stacks and suppression of sub-channel charge trapping in buffer layers

*Matthew D. Smith1、Chengzhi Zhang1、 Yidi Yin1、Peng Huang1、Itsuki Furuhashi2、Yoann Robin3、Markus Pristovsek3、Martin Kuball1 (1. Center for Device Thermography and Reliability, University of Bristol、2. Graduate School of Engineering, Nagoya University、3. Center for Integrated Research of Future Electronics, Institute for Materials and Systems for Sustainability, Nagoya University)

[AS-P-001-6]Bias- and Temperature-Induced On-State Resistance Degradation in 650 V p-GaN HEMTs

*Renze Yu1、Saeed Jahdi1、Martin Kuball2 (1. School of Electrical, Electronic and Mechanical Engineering, University of Bristol, UK 、2. School of Physics, University of Bristol, UK)

[AS-P-001-7]Role of Dopant Engineering in Thermal Management of AlN UWBG Electronics

*E. G. Jurcik1、A. Krishnan2、B. C. Clifford1、H. Aller1、A. Khan3、A. Doolittle4、H. Amano5、P. E. Hopkins6、D. Agonafer1、S. Graham1,2 (1. A. James Clark School of Engineering, University of Maryland、2. Woodruff School of Mechanical Engineering, Georgia Institute of Technology、3. Molinaroli College of Engineering and Computing, University South Carolina、4. Department of Electrical and Computer Engineering, Georgia Institute of Technology 、5. Graduate School of Engineering, Nagoya University 、6. Department of Mechanical and Aerospace Engineering, University of Virginia)

[AS-P-001-8]Gate-recessed p-channel GaN transistor channel with Rc ~ 1 Ωmm and Rsh ~ 5 kΩ/□

*Joseph E. Dill1、Chuan F. C. Chang2、Rafael Panagiotopoulos3、Kazuki Nomoto4、Jimy Encomendero4、Debdeep Jena3,4、Huili Grace Xing3,4 (1. School of Applied & Engineering Physics, Cornell University、2. Department of Physics, Cornell University、3. Department of Materials Science & Engineering, Cornell University 、4. School of Electrical & Computer Engineering, Cornell University)

[AS-P-001-9]Hole Transport in GaN: Growth, Metrology, and Strain Engineering

*Chuan F. C. Chang1、Joseph E. Dill2、Rafael Panagiotopoulos3、Kazuki Nomoto4、Jimy Encomendero4、Debdeep Jena3,4、Huili Grace Xing3,4 (1. Department of Physics, Cornell University 、2. School of Applied & Engineering Physics, Cornell University、3. Department of Materials Science & Engineering, Cornell University 、4. School of Electrical & Computer Engineering, Cornell University)

[AS-P-001-10]A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors

*Aias Asteris1、Thai-Son Nguyen1、Huili Grace Xing1,2,3、Debdeep Jena1,2,3 (1. Department of Materials Science and Engineering, Cornell University、2. School of Electrical and Computer Engineering, Cornell University、3. Kavli Institute at Cornell for Nanoscale Science, Cornell University)

[AS-P-001-11]The Sapphire Regime: Realizing Si-Doped α-(AlxGa1-x)2O3 Films with Eg > 7 eV with S-MBE

*Jacob Steele1、Kazuki Nomoto2、Debaditya Bhattacharya2、Huili G. Xing1,2,4、Debdeep Jena1,2,4、Darrell. G. Schlom1,3,4 (1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA、2. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA、3. Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853, USA, 、4. Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA)

[AS-P-001-12]Polarization doped AlGaN pn diodes with low on resistance and low ideality factor

*S. Agrawal、D. Bhattacharya、H. W. Huang、H. G. Xing、D. Jena (1. Cornell University, Ithaca, New York 14853, USA)

[AS-P-001-13]High Temperature Characterization of Deep Recessed N-Polar GaN HEMT

*Harsh Rana1、Oguz Odabasi1、Christopher Claymore2、Tanmay Chavan2、Matthew Gudiery2、Umesh Mishra2、Elaheh Ahmadi1 (1. Department of Electrical and Computer Engineering, University of California – Los Angeles, CA, USA 、2. Electrical and Computer Engineering Department, University of California – Santa Barbara, CA, USA)

[AS-P-001-14]First demonstration of N-polar high Al-content AlGaN channel HEMT grown by plasma-assisted molecular beam epitaxy

*Stefan Kosanovic1、Irfan Khan2、Harsh Rana1、Rijo Baby1、Elaheh Ahmadi2 (1. Department of Electrical and Computer Engineering, University of California, Los Angeles 、2. Electrical and Computer Engineering Department, University of California, Santa Barbara)

[AS-P-001-15]Exploring GaN Trench CAVET Performance from Cryogenic to Elevated Temperatures

*Xinyi Wen1、 Allison Brand1、Junrui Lyu1、Srabanti Chowdhury1 (1. Department of Electrical Engineering, Stanford University, Stanford, CA, USA)

[AS-P-001-16]Effect of growth temperature on the GaN/AlN in N-polar AlN-based HEMT

*Itsuki Furuhashi1、Xu Yang2、Yoann Robin2、Yoshio Honda2、Hiroshi Amano2、Markus Pristovsek2 (1. Graduate School of Engineering, Nagoya Univeristy 、2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University)

[AS-P-001-17]Growth of a-plane BaTiO3 on a-plane β-Ga2O3 by Molecular-Beam Epitaxy

*Kathy Azizie1、Naomi A. Pieczulewski1、Jian V. Li2,3、Nicholas A. Parker1、Nolan S. Hendricks4、Kyle J. Liddy4、Yorick A. Birkhölzer1、Eric A. Welp5、Luke Omodt5、Thaddeus J. Asel2、Shin Mou2、David A. Muller6,7、Darrell G. Schlom1,6,7 (1. Department of Materials Science and Engineering, Cornell University、2. Air Force Research Laboratory, Materials and Manufacturing Directorate、3. Core4ce、4. Air Force Research Laboratory, Sensors Directorate、5. Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials, Cornell University、6. Kalvi Institute at Cornell for Nanoscale Science、7. School of Applied and Engineering Physics, Cornell University)

[AS-P-001-18]Study of Crystalline N-Polar Aluminum Nitride growth on both On-axis and off-axis Si (111)

*Tahmid Sami Rahman1、Brian Chang-Chien2、Seungjun Kim3、Sunil Choudhary2、Elaheh Ahmadi1 (1. Department of Electrical and Computer Engineering, University of California, Los Angeles、2. Department of Materials Science and Engineering, University of California, Los Angeles、3. Department of Chemical and Biomolecular Engineering, University of California, Los Angeles)

[AS-P-001-19]Analysis and modeling of the positive degradation mechanism observed in 265 nm UV-C LEDs

*Francesco Piva1、N. Roccato1、M. Buffolo1,2、S. L. Longato1、M. Pilati1、N. Susilo3、D. H. Vidal3、A. Muhin3、L. Sulmoni3、T. Wernicke3、M. Kneissl3,4、C. De Santi1、G. Meneghesso1、E. Zanoni、M. Meneghini1,2 (1. Department of Information Engineering, University of Padova, Padova, Italy 、2. Department of Physics and Astronomy, University of Padova, Padova, Italy 、3. Technische Universität Berlin, Institute of Solid State Physics, Berlin, Germany 、4. Ferdinand-Braun-Institut (FBH), Berlin, Germany)
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