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EUV Lithography toward 10 nm and below –Prospect of Achievement for Both Highly Sensitive and low LWR EUV Resist–

Japan Standard Time <a href="https://us02web.zoom.us/j/85620803080?pwd=NlRldFN2OFNsYmYwSkd6ejM2WCtmdz09" target="_blank" class="labellinkbase labellink-video">Click here for Zoom</a> Meeting ID:856 2080 3080 Passcode:688157 Access is possible from 60 minutes before the start the session

EUV lithography is started to use for production of 7-nm logic device. In this panel symposium, highlysensitive and low LWR resist is required for future nodes. The prospect of the achievement for those characteristics are discussed by the panelists which are the experts in this field. Panelist: Toru Fujimori (Fujifilm), Danilo De Simone(IMEC),Florian Gstrein (Intel), Makoto Muramatsu (Tokyo Electron)

The Society of Photopolymer Science and Technology

The 38th International Conference of Photopolymer Science and Technology

The 38th International Conference of Photopolymer Science and Technology

[PS-1-1]EUV Lithography toward 10 nm and below
–Prospect of Achievement for Both Highly Sensitive and low LWR EUV Resist–

The 38th International Conference of Photopolymer Science and Technology

The 38th International Conference of Photopolymer Science and Technology

[PS-1-1]EUV Lithography toward 10 nm and below –Prospect of Achievement for Both Highly Sensitive and low LWR EUV Resist–

[PS-1-1]EUV Lithography toward 10 nm and below
–Prospect of Achievement for Both Highly Sensitive and low LWR EUV Resist–