ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
[Mo-1A-02]Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation
*Yutaka Fukui1, Katsutoshi Sugawara1, Rina Tanaka1, Hidenori Koketsu1, Hideyuki Hatta1, Yusuke Miyata1, Hiroyoshi Suzuki1, Kensuke Taguchi1, Yasuhiro Kagawa1, Shingo Tomohisa1, Naruhisa Miura1(1. Mitsubishi Electric Corp.(Japan))