[Mo-1A-04] 1200 V / 200 A V-groove Trench MOSFET Optimized for Low Power Loss and High Reliability | ICSCRM2019

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

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ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

[Mo-1A-04]1200 V / 200 A V-groove Trench MOSFET Optimized for Low Power Loss and High Reliability

*Kosuke Uchida¹, Toru Hiyoshi¹, Yu Saitoh¹, Hiroshi Egusa¹, Tatsushi Kaneda¹, Hirotaka Oomori¹, Takashi Tsuno¹(1. Sumitomo Electric Industries, Ltd.(Japan))

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