[Mo-1B-02] The carbon antisite-vacancy defect in 4H-SiC: energy level and charge state control | ICSCRM2019

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

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ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

[Mo-1B-02]The carbon antisite-vacancy defect in 4H-SiC: energy level and charge state control

*Nguyen Tien Son¹, Pontus Stenberg¹, Valdas Jokubavicius¹, Hiroshi Abe², Takeshi Ohshima², Jawad Ul-Hassan¹, Ivan Gueorguiev Ivanov¹(1. Department of Physics, Chemistry and Biology, Linköping Univ., SE-58183 Linköping(Sweden), 2. National Inst. for Quantum and Radiological Sci. and Tech., 1233 Watanuki, Takasaki, Gunma 370-1292(Japan))

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