[Mo-1B-03] Physical model of the optical charge state switching of the divacancy in 4H-SiC | ICSCRM2019

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

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ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

[Mo-1B-03]Physical model of the optical charge state switching of the divacancy in 4H-SiC

*Ivan G Ivanov¹, András Csóré², Björn Magnusson^1,5, Takeshi Ohshima³, Adam Gali^2,4, Son Nguyen Tien¹(1. Linköping Univ.(Sweden), 2. Budapest Univ. of Technology and Economics(Hungary), 3. National Institutes for Quantum and Radiological Science Technology(Japan), 4. Wigner Research Centre for Physics, Hungarian Academy of Sciences(Hungary), 5. Norstel AB(Sweden))

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