ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
[Mo-2B-01]High-quality C-face 3C-SiC(111) Grown on off-axis C-face 4H-SiC Substrates
Yuchen Shi1, Valdas Jokubavicius1, Ivan G. Ivanov1, Rositsa Yakimova1, Mikael Syväjärvi1, *Jianwu Sun1(1. Linkoping University, Sweden(Sweden))