ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
[Mo-2B-02]3C-SiC growth on ISP substrates: effects of substrate geometry on void formation and growth rate
*M. Zimbone1, C. Calabretta1, M. Zielinski2, F. Mancarella1, Francesco La Via1(1. CNR-IMM(Italy), 2. NOVASiC(France))