International Conference on Silicon Carbide and Related Materials (ICSCRM)

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

[IP-04(Invited)][Invited Poster Introduction]
Electrical Parameters Degradations of p-GaN HEMTs under Repetitive UIS Stress

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang²(1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))