ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
[Tu-1A-05LN]High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs
*Elena Mengotti1, Enea Bianda1, David Baumann1, Jason Bettega1, Joni Jormanainen2(1. ABB(Switzerland), 2. ABB Drives(Finland))