ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
[Tu-1B-01(Invited)]Operando X-ray topography analysis of 4H-SiC MOSFETs for investigating stacking fault expansion
K. Konishi1, R. Fujita1, K. Kobayashi1, A. Yoneyama1, Y. Mori1, *AKIO SHIMA1(1. Research & Development Group, Hitachi, Ltd.(Japan))