International Conference on Silicon Carbide and Related Materials (ICSCRM)

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

[Tu-1B-02]Nitrogen Concentration Dependence of Expansion Behavior of Double Shockley Stacking Faults in 4H-SiC Studied by In-situ Synchrotron X-ray Topography

*Fumihiro Fujie¹, Shunta Harada^1,2, Hiromasa Suo^3,4, Tomohisa Kato⁴, Toru Ujihara^1,2,5(1. Department of Materials Process and Eng., Nagoya Univ.(Japan), 2. Center for Integrated Res. of Future Electronics (CIRFE), Inst. of Materials and Systems for Sustainability (IMaSS), Nagoya Univ.(Japan), 3. Showa Denko K. K.(Japan), 4. National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan), 5. GaN Advanced Device Open Innovation Lab. (GaN-OIL), National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan))