International Conference on Silicon Carbide and Related Materials (ICSCRM)

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

[Tu-1B-03]Synchrotron X-ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers

*Tuerxun Ailihumaer¹, Balaji Raghothamachar¹, Michael Dudley¹, Gil Chung², Ian Manning², Edward Sanchez²(1. Stony Brook Univ.(United States of America), 2. Dupont Co.(United States of America))