ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
[Tu-2A-05]Superior turn-on loss characteristics of 1.2 kV SiC IE-UMOSFET with a very short channel length.
*Taiga Kanamori1, Ruito Aiba1, Masataka Okawa1, Shinsuke Harada2, Hiroshi Yano1, Noriyuki Iwamuro1(1. Univ. of Tsukuba(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))