ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
[Tu-2B-02]Growth of 50 mm useable height 150 mm 4H-SiC, defect conversion and reduction by thermal treatment and their characterization
*SRaghavan Parthasarathy1, Roman Drachev1, Bob Berliner1, Bala Bathey1, Henry Chou1(1. GT Advanced Technologies Tech(United States of America))