ICSCRM2019

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019

ICSCRM2019

Sep 29 - Oct 4, 2019Kyoto International Conference Center

[Tu-2B-03]Growth and Characterization of Al-Doped p-type 4H-SiC Grown by PVT

*Kazuma Eto1, Hiromasa Suo1,2, Tomohisa Kato1, Hajime Okumura1(1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan), 2. Showa Denko K. K.(Japan))