ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
[Tu-3A-02]Calculation of mobility and localized-state density at SiO2/SiC interface with random fluctuation
*Hironori Yoshioka1(1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan))