ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
ICSCRM2019
Sep 29 - Oct 4, 2019Kyoto International Conference Center
[Tu-3A-04]Evidence of a Transition Layer at the SiO2 / 4H-SiC MOS Interface from AC Conductance Data
*James A Cooper1(1. Sonrisa Research, Inc. and Purdue University(United States of America))