[AMD2-2(Invited)] 5291 ppi OLED Display with C-Axis Aligned Crystalline Oxide Semiconductor | Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Nov 27 - Nov 29, 2019Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 26 (IDW '19)

Nov 27 - Nov 29, 2019Sapporo Convention Center

[AMD2-2(Invited)]5291 ppi OLED Display with C-Axis Aligned Crystalline Oxide Semiconductor

*Shuichi Katsui¹, Hidetomo Kobayashi¹, Takashi Nakagawa¹, Yuki Tamatsukuri¹, Hideaki Shishido¹, Shogo Uesaka¹, Ryohei Yamaoka¹, Takaaki Nagata¹, Tomoya Aoyama¹, Yutaka Okazaki¹, Takayuki Ikeda¹, Shunpei Yamazaki¹(1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

https://doi.org/10.36463/idw.2019.0409

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Keywords:

IGZO,VR,OLED,High resolution,Micro display

C-axis aligned crystalline oxide semiconductor field-effect transistor (CAAC-OS FET) can be scaled down to a width and length of 60 nm. We have fabricated an organic light-emitting diode (OLED) display with more than 5000 ppi required in virtual reality (VR) displays by using CAAC-OS FETs as the backplane.

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