[AMD5-4] Simulation Study of Self-Heating and Edge Effects on Oxide-Semiconductor TFTs: Channel-Width Dependence | Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Nov 27 - Nov 29, 2019Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 26 (IDW '19)

Nov 27 - Nov 29, 2019Sapporo Convention Center

[AMD5-4]Simulation Study of Self-Heating and Edge Effects on Oxide-Semiconductor TFTs: Channel-Width Dependence

*Katsumi Abe¹, Kazuki Ota¹, Takeshi Kuwagaki¹(1. Silvaco Japan Co., Ltd. (Japan))

https://doi.org/10.36463/idw.2019.0461

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Keywords:

Oxide-semiconductor,Thin-film transistor,Self-heating,Edge effect,Device simulation

We studied the channel-width dependence of oxide-semiconductor TFTs via a device simulator. The results show that the ON-current is affected by two factors: self-heating and edge effects. The former increases the current with a rise in temperature, while the latter produces the high edge current-density caused by its strong electric-field.

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