Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Nov 27 - Nov 29, 2019Sapporo Convention Center
Back
The International Display Workshops
Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Nov 27 - Nov 29, 2019Sapporo Convention Center

[AMDp1-23L]Contact Properties between Low-Resistive Al-Based Source/Drain and InOx in Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to the Vertical-TFT

*Sori Jeon1, Kwang-Heum Lee1, Seung-Hee Lee1, Chi-Sun Hwang2, Sang-Hee Ko Park1(1. Korea Advanced Institute of Science and Technology (KAIST) (Korea), 2. Electronics and Telecommunications Research Institute (ETRI) (Korea))
https://doi.org/10.36463/idw.2019.0570
Download PDFDownload PDF

Keywords:

Low resistive Al metal,Contact resistance,Bottom-contact structure,Oxide TFT

Vertical-TFT is a promising structure to realize ultra-high resolution displays. Especially, low-resistive Al-based source/drain is necessary to reduce RC delay. Since vertical-TFT is bottom-contact structure, source/drain is oxidized during InOx semiconductor deposition. Here, we present the quantitative analysis result of metal/active contact properties in top-gate bottom-contact structured TFT, mimicking vertical-TFT.
Back