20210426191405388_ja.png

header.jpeg

icon.png

Change account information such as the email address and password on the account setting screen common to Confit.

Login required to view

Password required to view

Presentation Information

Session Details

To browse or post comments, you must log in.

You cannot post comments as it is outside the comment posting period.

This comment has been deleted. You cannot reply to this comment.

Special Topics

Program Type

Announcements

Profile management

Sessions

Search presentations

Bookmark

Download PDF for print

Timetable

E/E Inverter Using Four-Terminal Poly-GexSn1-x TFTs on Glass

We demonstrated an E/E inverter using polycrystalline germanium-tin (poly-GexSn1-x) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) using Cu. The TFTs in the E/E inverter comprises a planar four-terminal (4T) structure, in which the TFTs were enabled to be normally-off by the control gate voltage (VCG). The inverter performance was varied by changing VCG.

The International Display Workshops

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMDp2-14L]E/E Inverter Using Four-Terminal Poly-Ge_xSn_1-xTFTs on Glass

Keywords:

Proceedings of the International Display Workshops Volume 26 (IDW '19)

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMDp2-14L]E/E Inverter Using Four-Terminal Poly-GexSn1-x TFTs on Glass

Keywords:

[AMDp2-14L]E/E Inverter Using Four-Terminal Poly-Ge_xSn_1-xTFTs on Glass