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High Efficient GaN Based Micro LEDs for High Re-solution Micro LED Displays

The developments of high performance InGaN based micro-light-emitting diodes (µLEDs) are discussed. Through novel epitaxial growth and processing, efficiency as high as 42% EQE are achieved.  The critical challenges of µLEDs, namely full-color scheme, decreasing pixel size and mass transfer technique, and their potential solutions are explored.

The International Display Workshops

Proceedings of the International Display Workshops Volume 27 (IDW '20)

Proceedings of the International Display Workshops Volume 27 (IDW '20)

[KeynoteAddress-3]High Efficient GaN Based Micro LEDs for High Re-solution Micro LED Displays

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