[AMD1-1(Invited)] Current Status on the n/p type oxide semiconductor materials and the associated devices using Atomic Layer Deposition. | Proceedings of the International Display Workshops Volume 27 (IDW '20)

Proceedings of the International Display Workshops Volume 27 (IDW '20)

Dec 9 - Dec 11, 2020Virtual Conference

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Proceedings of the International Display Workshops Volume 27 (IDW '20)

Dec 9 - Dec 11, 2020Virtual Conference

[AMD1-1(Invited)]Current Status on the n/p type oxide semiconductor materials and the associated devices using Atomic Layer Deposition.

*Jin-Seong Park¹, TaeHyun Hong¹, Wanho Choi¹, Kyungrok Kim¹, Hyemi Kim¹, Su Hwan Choi¹(1. Hanyang Univ. (Korea))

https://doi.org/10.36463/idw.2020.0137

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Keywords:

Atomic Layer Deposition,Oxide Semiconductor,Thin Film Transistor,n-type,p-type

Atomic Layer Deposition (ALD) has been introduced for oxide semiconductor synthesis and device applications. Interestingly, ALD enables to deposit not only high-performance oxide semiconductor (a-IGZO, etc.) but also p-type oxide semiconductors (CuO and SnO) at low deposition temperature. It will have great potential to solve the current material and device issues. ALD will be the emerging thin-film process in the coming display application.

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