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A Study on the Radiation Hardness of Amorphous Oxide Thin-Film Transistors

We investigated the effects of film thickness (t<sub>ch</sub>) on the radiation hardness of indium-gallium-tin oxide (IGTO) thin films transistors (TFTs). The IGTO TFT with the 12 nm thick channel layer exhibited the best electrical performance and radiation tolerance. The radiation tolerance significantly decreased as t<sub>ch</sub> increased.

The International Display Workshops

Proceedings of the International Display Workshops Volume 28 (IDW '21)

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[AMD2-2(Invited)]A Study on the Radiation Hardness of Amorphous Oxide Thin-Film Transistors

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