[AMD1-4 (Invited)]The Early Work on Sputtering Formation of Amorphous IGZO (In-Ga-Zn-O) Channel and SnO Channel TFTs
*Hisato Yabuta1,2, Ryo Hayashi1, Hideya Kumomi1,3(1.Canon Inc. (Japan), 2.Kyushu University (Japan), 3.Tokyo Institute of Technology (Japan))
Keywords:
IGZO (In-Ga-Zn-O),sputtering,thin-film transistor (TFT),SnO,oxide semiconductor
We will talk about the early work on sputtering formation of amorphous IGZO (In-Ga-Zn-O) channel and SnO TFTs.
