Proceedings of the International Display Workshops Volume 30 (IDW '23)
Dec 6 - Dec 8, 2023TOKI MESSE Niigata Convention Center
Proceedings of the International Display Workshops Volume 30 (IDW '23)
Dec 6 - Dec 8, 2023TOKI MESSE Niigata Convention Center
[DXR1-2 (Invited)]Study of BGaN Semiconductor for Novel Neutron Semiconducting Detector
*Takayuki Nakano1, Toru Aoki1(1. Shizuoka University (Japan))
Keywords:
BGaN,neutron detection,semiconductor detector,compound semiconductor
BGaN semiconductor is expected as a novel neutron detection technology because of including B atom, which has large neutron capture cross section. Furthermore, BGaN has high-temperature tolerance and is expected as a radiation detector in a high-temperature conditions. In this study, the temperature tolerance of BGaN semiconductor detectors was investigated.