[MEET4-1 (Invited)] Catastrophic Failure in Quantum Dots Light-Emitting Diodes: a Morphology Study | Proceedings of the International Display Workshops Volume 30 (IDW '23)

Proceedings of the International Display Workshops Volume 30 (IDW '23)

Dec 6 - Dec 8, 2023TOKI MESSE Niigata Convention Center

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Proceedings of the International Display Workshops Volume 30 (IDW '23)

Dec 6 - Dec 8, 2023TOKI MESSE Niigata Convention Center

[MEET4-1 (Invited)]Catastrophic Failure in Quantum Dots Light-Emitting Diodes: a Morphology Study

Jingrui Ma¹, Xiangwei Qu¹, *Xiao Wei Sun¹(1. Southern University of Science and Technology (China))

https://doi.org/10.36463/idw.2023.0936

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Keywords:

Quantum dot,Quantum dot light-emitting diode,Electron transport layer,Exciton quenching

Understanding the failure mechanisms of quantum dot light-emitting diodes is crucial for their applications. In this study, morphological analysis of catastrophically failed devices reveals distinctive volcanic-like characteristics. These features stem from the detachment and disruption of the device's structure, encompassing the organic functional layer and metal electrode. This phenomenon is believed to be initiated by the synergistic effects of oxygen, moisture, and electrical current.

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