Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[AMD1-1(Invited)]Improvement in the Reliability for Polycrystalline Indium Oxide Based Thin-Film Transistors by Epitaxial Passivation Layers
Prashant R. Ghediya1, Yusaku Magari1, Hikaru Sadahira1, Takashi Endo1, Mamoru Furuta2, Yuqiao Zhang3, Yasutaka Matsuo1, *Hiromichi Ohta1(1. Hokkaido University (Japan), 2. Kochi University of Technology (Japan), 3. Jiangsu University (China))
Keywords:
Indium oxide,Thin-film transistors,Reliability,Epitaxial growth,Passivation layers
Although polycrystalline In2O3 thin-film transistors (TFTs) show outstandingly high field effect mobility of 140 cm2 V-1 s-1, there is a serious drawback in the reliability. We show that the In2O3-TFTs passivated with Y2O3 and Er2O3 films are highly reliable and do not show threshold voltage shifts when applying gate bias, most likely due to that epitaxial growth of the passivation layer occurred.