Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[AMD1-2(Invited)]Extraction of Intrinsic Field-Effect Mobility in Thin-Film Transistors Using In2O3-Related Oxide Semiconductors
*Takanori Takahashi1, Yukiharu Uraoka1(1. Nara Institute of Science and Technology (Japan))
Keywords:
Oxide semiconductors,In2O3,High-mobility,Transmission line model,TFT
We have demonstrated extraction of intrinsic field-effect mobility based on transmission line model in typical top-contact/bottom-gate type thin-film transistors using high-mobility crystalline oxide semiconductor channel. The channel and contact/parasitic resistances are extracted and discussed which are essential for understanding device operation and mobility estimation.