Presentation Information

[AMD1-2(Invited)]Extraction of Intrinsic Field-Effect Mobility in Thin-Film Transistors Using In2O3-Related Oxide Semiconductors

*Takanori Takahashi1, Yukiharu Uraoka1 (1. Nara Institute of Science and Technology (Japan))

Keywords:

Oxide semiconductors,In2O3,High-mobility,Transmission line model,TFT