Presentation Information
[AMD1-2(Invited)]Extraction of Intrinsic Field-Effect Mobility in Thin-Film Transistors Using In2O3-Related Oxide Semiconductors
*Takanori Takahashi1, Yukiharu Uraoka1 (1. Nara Institute of Science and Technology (Japan))
Keywords:
Oxide semiconductors,In2O3,High-mobility,Transmission line model,TFT
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