[AMD1] Oxide TFT (1)

5:40 PM - 6:00 PM JST(8:40 AM - 9:00 AM UTC)

[AMD1-4] Highly Reliable Hydrogen-Doped Polycrystalline Indium Oxide Top-Gate Thin-Film Transistor (InO_x:H TFT) with Hydrogen-Free SiO₂ Gate Insulator and Boron Implanted Source and Drain Regions

*Mir Mutakabbir Alom¹, Motoki Ando¹, Yoshihiro Sato², Takafumi Kambe², Tsutomu Satoyoshi², Toshimasa Ui³, Keisuke Yasuta³, Yuya Yamane³, Junichi Tatemichi³, Mamoru Furuta¹ (1. Kochi University of Technology (Japan), 2. Tokyo Electron Technology Solutions Ltd. (Japan), 3. Nissin Ion Equipment Co., Ltd. (Japan))

Keywords:

Oxide Semiconductor,Thin Film Transistor,Realiability,Ion Implantation