Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[AMD1-4]Highly Reliable Hydrogen-Doped Polycrystalline Indium Oxide Top-Gate Thin-Film Transistor (InOx:H TFT) with Hydrogen-Free SiO2 Gate Insulator and Boron Implanted Source and Drain Regions
*Mir Mutakabbir Alom1, Motoki Ando1, Yoshihiro Sato2, Takafumi Kambe2, Tsutomu Satoyoshi2, Toshimasa Ui3, Keisuke Yasuta3, Yuya Yamane3, Junichi Tatemichi3, Mamoru Furuta1(1. Kochi University of Technology (Japan), 2. Tokyo Electron Technology Solutions Ltd. (Japan), 3. Nissin Ion Equipment Co., Ltd. (Japan))
Keywords:
Oxide Semiconductor,Thin Film Transistor,Realiability,Ion Implantation
We demonstrated a top-gate self-aligned (TG-SA) hydrogen-doped polycrystalline Indium oxide (poly-InOx:H) thin film transistor with a hydrogen-free SiO2 gate insulator. The TG-SA poly-InOx:H TFT operated in enhancement mode after 300°C annealing, exhibited excellent stability under negative gate bias and temperature stress, with no Vth shift at 60°C for 6,000s.