[AMD2-1(Invited)] Low Voltage DNTT-Based Organic TFT: Layout, Device Characteristics, and Circuit Design | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[AMD2-1(Invited)]Low Voltage DNTT-Based Organic TFT: Layout, Device Characteristics, and Circuit Design

*Takashi Sato¹, Kunihiro Oshima¹, Qin Zhaoxing¹(1. Kyoto University (Japan))

https://doi.org/10.36463/idw.2024.0172

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Keywords:

organic thin-film transistor,fringe leakage current,dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene

This paper reviews recent developments in bottom-gate top-contact organic thin-film transistors based on DNTT, operating at supply voltages below 3V. The advancements in device structure and the impact of layout on current characteristics are evaluated through experimental measurements. Additionally, circuit design examples, including logic circuits and a spiking neural network, are discussed.

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