[AMD2-2(Invited)] On the Scalability of Nanosheet Oxide Semiconductor FETs | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[AMD2-2(Invited)]On the Scalability of Nanosheet Oxide Semiconductor FETs

*Masaharu Kobayashi¹, Kaito Hikake¹, Xingyu Huang¹, Sunghun Kim¹, Kota Sakai¹, Zhuo Li¹, Tomoko Mizutani¹, Takuya Saraya¹, Toshiro Hiramoto¹, Takanori Takahashi², Mutsunori Uenuma², Yukiharu Uraoka²(1. The University of Tokyo (Japan), 2. Nara Institute of Science and Technology (Japan))

https://doi.org/10.36463/idw.2024.0176

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Keywords:

nanosheet,oxide semiconductor,monolithic 3D integration,ALD

We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3D integration in terms of ALD material engineering, high-field transport, and statistical variability. The highlights are: (1) systematic comparison among InGaO, InZnO and InGaZnO grown by ALD, (2) demonstration of unsaturated carrier velocity behavior in sub-100nm gate length, (3) comparable variability of NS OS FETs against Si CMOS.

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