Presentation Information
[AMD2-2(Invited)]On the Scalability of Nanosheet Oxide Semiconductor FETs
*Masaharu Kobayashi1, Kaito Hikake1, Xingyu Huang1, Sunghun Kim1, Kota Sakai1, Zhuo Li1, Tomoko Mizutani1, Takuya Saraya1, Toshiro Hiramoto1, Takanori Takahashi2, Mutsunori Uenuma2, Yukiharu Uraoka2 (1. The University of Tokyo (Japan), 2. Nara Institute of Science and Technology (Japan))
Keywords:
nanosheet,oxide semiconductor,monolithic 3D integration,ALD
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