[AMD2-3] Impact of Oxygen Content in IGZO on MW of FeTFTs | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[AMD2-3]Impact of Oxygen Content in IGZO on MW of FeTFTs

*Heyoung Kang¹, Seung Hee Cha¹, Jae Kyeong Jeong¹(1. Hanyang University (Korea))

https://doi.org/10.36463/idw.2024.0178

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Keywords:

IGZO,FeTFT,Oxygen Vacancy,Memory Window

This study examines the effect of changing PO₂ during IGZO sputter deposition on FeTFTs' electrical properties. MW peaked at 1.8V for 5% PO₂ and decreased with higher PO₂, while carrier mobility declined due to reduced V_O. V_th shifted positively up to 10% PO₂ and negatively at 20%. XPS revealed that oxygen concentration during deposition forms V_O and O_i, affecting MW. These findings stress the importance of controlling oxygen content to optimize IGZO-based FeTFTs.

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