Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[AMD4-3]Channel Deposition Engineering of Novel a-IGZO TFT with ALD Process
*Chen Gu1,2, Chuanke Chen1,2, Chunyu Zhang1,2, Ziheng Bai1, Di Geng1,2(1. Chinese Academy of Sciences (China), 2. University of Chinese Academy of Sciences (China))
Keywords:
ALD,a-IGZO TFT,high mobility
The a-IGZO thin film transistors are proposed, with the active layer deposited by atomic layer deposition (ALD). The characteristics of ALD a-IGZO TFT are better than those of sputtering-IGZO film (SPU) TFT. The stability of ALD device is studied. The device shows no obvious degradation after 400 ℃ annealing. By optimizing the ALD process, the Vth and SS of ALD devices are improved obviously.