[AMD4-4L] High Mobility Polycrystalline Oxide Thin Film Transistors for 12.6 inch AMOLED Display | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[AMD4-4L]High Mobility Polycrystalline Oxide Thin Film Transistors for 12.6 inch AMOLED Display

*Xue Liu¹, Qidi Liu¹, Guowen Yan⁴, Mengsen Wang¹, Xuyang Zhang¹, Yinghai Ma¹, Fa-Hsyang Chen², Wangfeng Xi³, Rubo Xing², Xiujian Zhu²(1. Yungu (Gu'an) Technology Co.,Ltd. (China), 2. Kunshan Govisionox Optoelectronics Co., Ltd. (China), 3. Jiangsu Huixian Display Technology Co., Ltd. (China), 4. Hefei Visionox Technology Co.,Ltd. (China))

https://doi.org/10.36463/idw.2024.0210

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Keywords:

Polycrystalline,oxide thin film transistor,high mobility

A high mobility polycrystalline oxide thin film transistors has been fabricated on the Gen. 4.5 glass substrate. The device shows high field-effect mobility (μFE)~44 cm² /Vs with threshold voltage (Vth) of 0.07V, the device shows a good uniformity and reliability, Vth shift positively around 1V under positive bias temperature stress of 12h, 12.6 inch AMOLED panel shows a good display uniformity.

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