Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[AMD5/FMC7-1(Invited)]Fluorination Technology for Reliable Metal-Oxide Thin-Film Transistors
Man Wong1, *Wei Jiang1(1. The Hong Kong University of Science and Technology (China))
Keywords:
thin-film transistor,metal oxide semiconductor,,fluorination,indium-gallium-zinc oxide
Plasma-based fluorination has been reported to enhance the performance of metal-oxide thin-film transistors. The effectiveness of fluorination can be improved by conducting a pre-fluorination non-oxidizing anneal. It is also affected by process conditions including fluorination temperature, as well as post-fluorination air exposure and drive-in.