[AMD5/FMC7] Oxide TFT Manufacturing Technology

9:20 AM - 9:40 AM JST(12:20 AM - 12:40 AM UTC)

[AMD5/FMC7-2] Effects of Sequential Anneals in Sealed and Oxidizing Ambiences on Oxide Thin-Film Transistors

*JingYu Fan¹, Jianming Zhu¹, Xiao Li¹, Zhendong Jiang¹, Yunping Wang¹, Dan Yang¹, Zeyu Cai¹, Shengdong Zhang¹, Lei Lu¹ (1. Peking University (China))

Keywords:

Amorphous InGaZnO,Elevated-Metal Metal-Oxide Thin-Film Transistors,Positive Bias Temperature stress,Anneal

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