[AMD5/FMC7-2] Effects of Sequential Anneals in Sealed and Oxidizing Ambiences on Oxide Thin-Film Transistors | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[AMD5/FMC7-2]Effects of Sequential Anneals in Sealed and Oxidizing Ambiences on Oxide Thin-Film Transistors

*JingYu Fan¹, Jianming Zhu¹, Xiao Li¹, Zhendong Jiang¹, Yunping Wang¹, Dan Yang¹, Zeyu Cai¹, Shengdong Zhang¹, Lei Lu¹(1. Peking University (China))

https://doi.org/10.36463/idw.2024.0217

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Keywords:

Amorphous InGaZnO,Elevated-Metal Metal-Oxide Thin-Film Transistors,Positive Bias Temperature stress,Anneal

The PBTS stability of the IGZO EMMO TFT has been improved from by sequential annealed after the channel was sealed by the impermeable metal layer. Furthermore, the shifted V_th of the TFT sequential annealed is -1 V, suffering post N₂ anneals, while the shifted V_th of O₂ post annealed TFT is about -15 V.

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