[AMD5/FMC7-3] Top-Gate IGZO TFT With Dry Etching Process for High-Resolution Display Application | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[AMD5/FMC7-3]Top-Gate IGZO TFT With Dry Etching Process for High-Resolution Display Application

*Zhang Chunyu^1,2, Chen Chuanke^1,2(1. IMECAS (China), 2. University of Chinese Academy of Sciences (China))

https://doi.org/10.36463/idw.2024.0221

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Keywords:

IGZO TFT,Dry etching,NBS

In this study, we fabricated IGZO TFTs that IGZO film was patterned by a Cl-based dry etching process. The transfer characteristics of the device are analyzed. The fabricated IGZO TFT shows SS of 81.26 mV/Dec, mobility of 17.02 cm²/Vs and V_th of -1V. The reliability performance of NBS at -5V bias for 3600 seconds were also studied. These results show that the fabricated IGZO TFT with dry etching process has good performance and reliability.

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