[AMD5/FMC7-4L]Highly Reliable Hydrogen-Free Top-Gate Oxide TFT ~ Hydrogen-Free ICP-CVD SiO2 and SiNx films for TFTs ~
*Mamoru Furuta1, Mir Mutakabbir Alom1, Motoki Ando1, Yoshihiro Sato2, Takafumi Kambe2, Tsutomu Satoyoshi2(1. Kochi University of Technology (Japan), 2. Tokyo Electron Technology Solutions Ltd (Japan))
Keywords:
Oxide TFT,Reliability,Hydrogen-free,ICP-CVD,Top-gate
In this presentation, hydrogen-free SiO2 and SiNx films were successfully deposited by large-area inductively coupled plasma chemical vapor deposition (ICP-CVD) using hydrogen-free source gases. The self-aligned top-gate hydrogen-free In–Ga-Zn–Sn–O (IGZTO) TFT is demonstrated toward highly reliable oxide TFTs.