[AMD6/IST4-3(Invited)] Curved CMOS Image Sensors Developed by SOI Transfer Technology | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[AMD6/IST4-3(Invited)]Curved CMOS Image Sensors Developed by SOI Transfer Technology

*Masahide Goto¹, Shigeyuki Imura¹, Hiroto Sato¹(1. NHK Science & Technology Research Laboratories (Japan))

https://doi.org/10.36463/idw.2024.0232

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Keywords:

CMOS image sensors,curved,flexible,silicon-on-insulator (SOI),transfer

We report the development of curved complementary metal-oxide-semiconductor image sensors (CISs) using silicon-on-insulator transfer technology. The 11-μm-thick device layer was transferred to a flexible substrate and mounted on a cylindrical concave stage. The curved CISs successfully operated, demonstrating lens aberration correction. This development highlights the potential for various flexible devices, including sensors, memories, and displays.

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