[AMDp1-1L] High Performance P-type Tellurium Thin-Film Transistors with Sub-100 nm Channel Length | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[AMDp1-1L]High Performance P-type Tellurium Thin-Film Transistors with Sub-100 nm Channel Length

*Sooji Nam^1,2, Chihun Sung¹, Jung Hoon Han¹, Dong Yeob Shin³, Kwun-Bum Chung³, Sung Haeng Cho¹(1. Electronics and Telecommunications Research Institute (Korea), 2. University of Science and Technology (Korea), 3. Dongguk University (Korea))

https://doi.org/10.36463/idw.2024.0250

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Keywords:

Tellurium,short-channel,thin-film transistor,monolithic 3D integration

We investigate the structural, optical, and electrical properties of sputtered Te films and report the device characteristics of p-type Te TFTs with sub-100 nm channel length using a novel photolithography method. The optimized TFT devices exhibit excellent electrical performance at a low temperature of 150 °C.

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