Presentation Information
[AMDp1-3L]High-Performance Oxide Transistor Induced by a Metal Capping Layer on the Active Layer: Applications in High-speed Measurement
*Ji-Min Park1, Do Hwan Kim2, Hyun-Suk Kim1 (1. Dongguk University (Korea), 2. Hanyang University (Korea))
Keywords:
Oxide semiconductors,Transistors,Metal capping,High mobility,Electron injection
Password required to view
To view or download the proceedings, please log into your A-Pass using the "Log in" button.
If you do not have a A-Pass, enter the password provided by the IDW Secretariat in the designated box and click the "Authenticate" button.
If you do not have a A-Pass, enter the password provided by the IDW Secretariat in the designated box and click the "Authenticate" button.
Log in
or
Comment
To browse or post comments, you must log in.Log in