Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[AMDp1-3L]High-Performance Oxide Transistor Induced by a Metal Capping Layer on the Active Layer: Applications in High-speed Measurement
*Ji-Min Park1, Do Hwan Kim2, Hyun-Suk Kim1(1. Dongguk University (Korea), 2. Hanyang University (Korea))
Keywords:
Oxide semiconductors,Transistors,Metal capping,High mobility,Electron injection
This study focuses on enhancing the mobility of top-gate oxide thin-film transistors (TFTs) for ultrahigh-resolution displays. The proposed solution involves metal-capped Zn-Ba-Sn-O (ZBTO) transistors with polymer gate dielectric layer. The resulting device achieves five times higher mobility than the reference, demonstrating potential for high-resolution, large-area, and flexible displays.