Presentation Information
[AMDp1-3L]High-Performance Oxide Transistor Induced by a Metal Capping Layer on the Active Layer: Applications in High-speed Measurement
*Ji-Min Park1, Do Hwan Kim2, Hyun-Suk Kim1 (1. Dongguk University (Korea), 2. Hanyang University (Korea))
Keywords:
Oxide semiconductors,Transistors,Metal capping,High mobility,Electron injection