Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[AMDp1-5L]Low Voltage Operating Oxide Semiconductor-Based Negative Capacitance Field-Effect Transistors
*Jihyeon Min1, Kyong Jae Kim2, You Seung Rim2, Hyun-Suk Kim1(1. Dongguk University (Korea), 2. Sejong University (Korea))
Keywords:
low power,high-k dielectric,ferroelectric,negative capacitance,oxide semiconductor
In this study, an amorphous oxide semiconductor-based transistor integrated with ferroelectric Hf0.5Zr0.5O2 was investigated. A stacked structure of ferroelectric and high-k dielectric layers was used for low-power operation. As a result, the NCFET achieved a minimum subthreshold swing of 50.84 mV/dec and an ION/OFF ratio exceeding 6 orders of magnitude.