Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[AMDp1-6L]Ultra-Thin Indium Oxide Thin-Film Transistors by Plasma Enhanced Atomic Layer Deposition
*Jaewon Park1, Seong Cheol Jang1, Hyun-Suk Kim1(1. Dongguk University (Korea))
Keywords:
thin-film transistors,amorphous oxide semiconductors,scale down,atomic layer deposition,indium oxide
In this work, Indium oxide channel layer was fabricated by plasma enhanced atomic layer deposition (PEALD) process at a low process temperature of 150 degrees. In order to achieve the ultra-thin In2O3 channel layer, the thickness of Indium oxide channel layers was scaled down. (ranging from 1nm to 5nm).