[AMDp2-4] The Improvement of Amorphous Silicon Thin Film Transistor Photosensitivity for Optical Sensor | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[AMDp2-4]The Improvement of Amorphous Silicon Thin Film Transistor Photosensitivity for Optical Sensor

*Hejing Zhang¹, Chunyan Lin¹, Junlong Fan¹, Zhen Liu¹, An-thung Cho¹, James Hsu¹, Wade Chen¹(1. Chongqing HKC Optoelectronics Technology Co., Ltd. (China))

https://doi.org/10.36463/idw.2024.0285

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Keywords:

optical sensor,a-Si TFT,top gate driven,gap-gate TFT structure,photosensitive current

Different gate driven a-Si:H TFTs and various gap-gate a-Si:H TFT structures were proposed and measured under different illuminance intensities for optical sensors, processes of which were completely compatible with existing LCD VA-TFT arrays in this paper. The top gate driven TFT showed higher I_photo/I_dark ratio as high as 1.70×10⁷, and the novel gap-gate TFT structure expressed lower off current.

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