Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[DESp1-3L]Impact of Oxygen Plasma on the Performance of IGZO/PbS QDs/Ga2O3 Structures for Enhancing Photo Sensor Application
*Yong Jun Jeong1, Jae Kyeong Jeong1(1. Hanyang University (Korea))
Keywords:
Indium-Gallium-Zinc-Oxide (IGZO),PbS Quantum Dots (QDs),Phototransistor,Near infrared Sensor
In this paper, we improved the performance of IGZO/PbS QD phototransistors by inducing partial
oxidation in the PbS QDs via oxygen plasma during Ga2O3 layer deposition. The resulting IGZO/PbS QDs/Ga2O3 photo transistor demonstrated remarkable responsivity 196.69 A/W and detectivity 5.47 × 1012 Jones under 1550 nm illumination.
oxidation in the PbS QDs via oxygen plasma during Ga2O3 layer deposition. The resulting IGZO/PbS QDs/Ga2O3 photo transistor demonstrated remarkable responsivity 196.69 A/W and detectivity 5.47 × 1012 Jones under 1550 nm illumination.