Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[DXRp1-13]Impact of Buffer Layer in BGaN Growth on QST Substrates
*Atsuhiro Hayashi1, Shun Nishikawa1, Kota Matsumoto2, Norikazu Ito2, Taketoshi Tanaka2, Ken Nakahara2, Yoku Inoue1, Toru Aoki1, Takayuki Nakano1(1. Shizuoka University (Japan), 2. ROHM Co., LTD (Japan))
Keywords:
BGaN,QST substrate,MOVPE
BGaN is expected as a novel neutron detection material. BGaN epitaxial growth for fabricating the diode device is difficult due to the small size of B atoms compared to Ga atoms and the strain in BGaN. To fabricate high-quality BGaN, strain controll is important, and the crack generation must be suppressed. In this study, the influence of strain on BGaN growth due to the changing of the buffer layer was investigated.