[FLX3-4L] Strain Effects on Polycrystalline Germanium Thin Films for Strain Transistors | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

Back

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[FLX3-4L]Strain Effects on Polycrystalline Germanium Thin Films for Strain Transistors

*Kota Igura¹, Koki Nozawa¹, Takashi Suemasu¹, Kaoru Toko¹(1. University of Tsukuba (Japan))

https://doi.org/10.36463/idw.2024.1333

Download PDF

Keywords:

semiconductor,thin films,solid-phase crystallization,strain

We investigated the effects of strain on the crystal and electrical properties of p-type and n-type polycrystalline Ge layers. Strain affects carrier mobility, particularly electron mobility. This is due to changes in grain boundary barrier height. Notably, the strain-dependent behavior of the grain boundary barrier height is opposite for between n-type and p-type Ge layers.

Back